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VISHAY SIHB080N60E-GE3 MOSFET, N-CH, 600V, 35A, TO-263


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-4077834
Manufacturer:
     Vishay
Manufacturer no.:
     SIHB080N60E-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.07 ohm Product Range E Series No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Transistor Case Style TO-263 (D2PAK) Continuous Drain Current Id 35 A Operating Temperature Max 150 °C Drain Source Voltage Vds 600 V Power Dissipation 227 W Qualification - Gate Source Threshold Voltage Max 5 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHB080N60E-GE3, 4077834, 407-7834
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6546 Yorkshire LS12
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