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VISHAY SISH107DN-T1-GE3 MOSFET, P-CH, -30V, 34.4A, POWERPAK 1212


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-4154264
Manufacturer:
     Vishay
Manufacturer no.:
     SISH107DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.011 ohm Product Range TrenchFET Series No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type P Channel Transistor Case Style PowerPAK 1212 Continuous Drain Current Id 34.4 A Operating Temperature Max 150 °C Drain Source Voltage Vds 30 V Power Dissipation 26.5 W Qualification - Gate Source Threshold Voltage Max 2.5 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SISH107DN-T1-GE3, 4154264, 415-4264
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6546 Yorkshire LS12
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