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ROHM R6009RND3TL1 MOSFET, N-CH, 600V, 9A, TO-252


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-4158094
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     R6009RND3TL1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 15 V Drain Source On State Resistance 0.51 ohm Product Range - No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Transistor Case Style TO-252 Continuous Drain Current Id 9 A Operating Temperature Max 150 °C Drain Source Voltage Vds 600 V Power Dissipation 125 W Qualification - Gate Source Threshold Voltage Max 7 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, ROHM, R6009RND3TL1, 4158094, 415-8094
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