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ROHM RD3P02BATTL1 MOSFET, P-CH, 100V, 20A, TO-252


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Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-4168777
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     RD3P02BATTL1
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.089 ohm Product Range - No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type P Channel Transistor Case Style TO-252 (DPAK) Continuous Drain Current Id 20 A Operating Temperature Max 150 °C Drain Source Voltage Vds 100 V Power Dissipation 56 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, ROHM, RD3P02BATTL1, 4168777, 416-8777
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£ 0.6012
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