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TOSHIBA TK2P90E,RQ(S MOSFET, N-CH, 900V, 2A, TO-252


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-4173066
Manufacturer:
     Toshiba
Manufacturer no.:
     TK2P90E,RQ(S
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 4.7 ohm Product Range - No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 2 A Operating Temperature Max 150 °C Transistor Case Style TO-252 (DPAK) Drain Source Voltage Vds 900 V Power Dissipation 80 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, TOSHIBA, TK2P90E,RQ(S, 4173066, 417-3066
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