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TOSHIBA TK65E10N1,S1X(S MOSFET, N-CH, 100V, 148A, TO-220


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Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-4173137
Manufacturer:
     Toshiba
Manufacturer no.:
     TK65E10N1,S1X(S
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.004 ohm Product Range U-MOSVIII-H Series No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 148 A Operating Temperature Max 150 °C Transistor Case Style TO-220 Drain Source Voltage Vds 100 V Power Dissipation 192 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised
Other search terms: Transistors, power transistor, Discretes, FETs, MOSFETs, Semiconductors, Single, TOSHIBA, TK65E10N1,S1X(S, 4173137, 417-3137
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6546 Yorkshire LS12
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