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TOSHIBA TPW2900ENH,L1Q(M MOSFET, N-CH, 200V, 36A, DSOP


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Product information

Item number:
     6546-4173249
Manufacturer:
     Toshiba
Manufacturer no.:
     TPW2900ENH,L1Q(M
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.024 ohm Product Range U-MOSVIII-H Series No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 36 A Operating Temperature Max 150 °C Transistor Case Style DSOP Drain Source Voltage Vds 200 V Power Dissipation 142 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, TOSHIBA, TPW2900ENH,L1Q(M, 4173249, 417-3249
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