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VISHAY SISS5112DN-T1-GE3 MOSFET, N-CH/100V/40.7A/POWERPAK 1212-8S


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-4199570
Manufacturer:
     Vishay
Manufacturer no.:
     SISS5112DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Transistor Case Style PowerPAK 1212-8S Continuous Drain Current Id 40.7 A Operating Temperature Max 150 °C Drain Source Voltage Vds 100 V Power Dissipation 52 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0124 ohm Product Range TrenchFET Gen V Series No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SISS5112DN-T1-GE3, 4199570, 419-9570
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6546 Yorkshire LS12
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