| |
|
| Item number: CIEN4-11281986 Manufacturer no.: MEM-DR320L-HL07-ER13 EAN/GTIN: n/a |
| |
|
| | |
| The H5TQ2G83BFR and H5TQ2G63BFR are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth. More information: Other features | Chips organisation | FBGA | Features | Internal memory | 2 GB | | Memory layout (modules x size) | 1 x 2 GB | | Internal memory type | DDR3 | | Memory clock speed | 1333 MHz | | Component for | PC/Server | | Memory ranking | 1 | | Memory voltage | 1.5 V | | Module configuration | 256M x 8 | Operational conditions | Operating temperature (T-T) | 0 - 85 °C |
|
| | |
| | | |
| Other search terms: Desktop memory, Desktop memory module, RAM, Random Access Memory, memory, ROM, DRAM, SDRAM, RDRAM, DDR, DDR2, EDO DRAM, EDO, DDR2-SDRAM, DDR-SDRAM, FPM RAM, FBDIMM, Boot Rom, ValueRAM, SODIMM, JetRAM, memory kit |
| | |
| |