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Infineon IPD30N06S2L-13 transistor 55 V


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Product information
Infineon IPD30N06S2L-13 transistor 55 V
Infineon IPD30N06S2L-13 transistor 55 V
Item number:
     CIEN8-79086343
Manufacturer:
     Infineon
Manufacturer no.:
     IPD30N06S2L13ATMA4
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Based on the combination of innovative packaging technology and Infineon’s thin wafer process technology, the new 40V OptiMOS™ T2 power MOSFETs offer best-in- class specifications. Infineon uses a diffusion soldering die attach approach to produce dedicated products in TO263, TO220 and TO262. Four OptiMOS™ T2 products in these packages are ready for production: the IPB160N04S4-02D (with 160A in a TO263 package), the IPB100N04S4-02D (with 100A in TO263) and the IPP/I100N04S4-03D (with 100A in TO220 and TO262). With those products, Infineon exceeds current RoHS (Restriction on Hazardous Substances) directives related to lead-based solder used to attach silicon chips to packages. Stricter ELV RoHS directives pending implementation after 2014 may require 100% lead-free packaging. The new Infineon devices allow customers to meet these stricter requirements.
More information:
Features
Voltage
55 V
Power
136 W
Resistance
0.0117 mΩ
Certification
RoHs
An overview of the best conditions of all 2 offers1
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