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Dual N-Channel MOSFET, 11.4 A, 60 V, 8-Pin V-DFN3030 Diodes Inc DMT6018LDR-13 / 1826931


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Product information
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Product Image
Item number:
     2794E-1826931
Manufacturer:
     Diodes
Manufacturer no.:
     DMT6018LDR-13
EAN/GTIN:
     n/a
Search terms:
Diodes
Power transistor
MOSFET
MOSFET transistor
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Applications Power Management Functions Analog Switch
More information:
Channel Type:
N
Maximum Continuous Drain Current:
11.4 A
Maximum Drain Source Voltage:
60 V
Package Type:
V-DFN3030
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
26 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
1.9 W
Maximum Gate Source Voltage:
±20 V
Length:
3.05mm
Maximum Operating Temperature:
+150 °C
Number of Elements per Chip:
2
Other search terms: PIN diode, PIN diodes, pin diode, 1826931, Semiconductors, Discrete Semiconductors, MOSFETs, DiodesZetex, DMT6018LDR13
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Rights to return this item: 2794 East Midlands NN17
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