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  IGBTs (1,628 items)

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Infineon IGB50N60TATMA1 IGBT, 90 A 600 V, 3-Pin PG-TO263-3 / 2156629 (2 offers) 
The Infineon low loss insulated-gate bipolar transistor in trenchstop and fieldstop technology.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference
Infineon
IGB50N60TATMA1
from £ 1.637*
per piece
 
 piece
ST Microelectronics
STGW30H60DFB
from £ 1.65*
per piece
 
 piece
Infineon IKW50N65WR5XKSA1 IGBT, 50 A 650 V PG-TO247-3 / 2442918 (2 offers) 
Maximum Continuous Collector Current = 50 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 282 W Package Type = PG-TO247-3
Infineon
IKW50N65WR5XKSA1
from £ 1.652*
per piece
 
 piece
Infineon IGB50N60TATMA1 IGBT, 90 A 600 V, 3-Pin PG-TO263-3 / 2156630 (1 offer) 
Maximum Continuous Collector Current = 90 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 333 W Package Type = PG-TO263-3 Pin Count = 3
Infineon
IGB50N60TATMA1
from £ 1.656*
per piece
 
 pieces
onsemi FGHL50T65MQDT IGBT, 80 A 650 V TO-247-3L / 2410731 (3 offers) 
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 268 W Package Type = TO-247-3L
onsemi
FGHL50T65MQDT
from £ 1.657*
per piece
 
 piece
ST Microelectronics
STGW40V60DF
from £ 1.66*
per piece
 
 piece
ST Microelectronics
STGW30V60DF
from £ 1.68*
per piece
 
 piece
ROHM RGTH50TS65DGC13 Single Collector, Single Emitter, Single Gate IGBT, 50 A 650 V TO-247GE / 2412290 (2 offers) 
Maximum Continuous Collector Current = 50 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 174 W Package Type = TO-247GE
ROHM Semiconductor
RGTH50TS65DGC13
from £ 1.69*
per piece
 
 piece
STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247 / 2066065 (2 offers) 
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduct...
ST Microelectronics
STGWA30IH65DF
from £ 1.70*
per piece
 
 piece
onsemi FGAF40N60UFTU IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole / 1454338 (2 offers) 
Discrete IGBTs, Fairchild Semiconductor
onsemi
FGAF40N60UFTU
from £ 1.703*
per piece
 
 piece
Infineon IGP40N65H5XKSA1 IGBT, 74 A 650 V, 3-Pin PG-TO220-3 / 2156632 (1 offer) 
Maximum Continuous Collector Current = 74 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20 V, ±30 V Maximum Power Dissipation = 250 W Package Type = PG-TO220-3 Pin Cou...
Infineon
IGP40N65H5XKSA1
from £ 1.705*
per piece
 
 pieces
ROHM RGTH40TS65DGC13 Single Collector, Single Emitter, Single Gate IGBT, 40 A 650 V TO-247GE / 2412286 (2 offers) 
Maximum Continuous Collector Current = 40 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 144 W Package Type = TO-247GE
ROHM Semiconductor
RGTH40TS65DGC13
from £ 1.71*
per piece
 
 piece
Infineon
IMBG120R350M1HXTMA1
from £ 1.712*
per piece
 
 piece
onsemi FGH40N60SMD IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole / 1241336 (2 offers) 
Discrete IGBTs, Fairchild Semiconductor
onsemi
FGH40N60SMD
from £ 1.713*
per piece
 
 piece
Infineon IKWH30N65WR6XKSA1 Single IGBT, 30 A 650 V, 3-Pin TO-247-3-HCC, Through Hole / 2326738 (1 offer) 
Maximum Continuous Collector Current = 30 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 83 W Package Type = TO-247-3-HCC Mounting Type ...
Infineon
IKWH30N65WR6XKSA1
from £ 1.719*
per piece
 
 pieces
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